Dual-Beam System (FEI Helios Nanolab)

Specifications

• Electron Beam:
  • Resolution: 0.9 nm (15 kV)
  • Landing Voltage: 350 V - 30 kV
  • Probe current: < 22 nA
  • Maximum horizontal field width: 1.5 mm at beam coincident point
    (WD 4 mm)
• Ion Beam:
  • Resolution: 4 nm (30 kV)
  • Landing Voltage: 500 V - 30 kV
  • Probe current: 1.5 pA - 20 nA    
  • Maximum horizontal field width: 2.5 mm at 5 kV at beam coincidence point
• Gas injection for deposition of platinum, wolfram and SiO2
• Etch gas supply (XeF2)
• STEM detector

Location

• Microstructure laboratory